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document number: 83618 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.5, 10-dec-08 335 optocoupler, phototransistor output, ac input, with base connection il250, il251, il252, il d250, ild251, ild252 vishay semiconductors description the il250, il251, il252, ild250, ild251, ild252 are bidirectional input optically coupled isolators consisting of two gallium arsenide infrared leds coupled to a silicon npn phototransistor per channel. the il250/ild250 has a minimu m ctr of 50 %, the il251, ild251 has a minimum ctr of 20 %, and the il252, ild252 has a minimum ctr of 100 %. the il250, il251, il252 are single channel optocouplers. the ild250, ld251, ild252 has two isolated channels in a single dip package. features ? ac or polarity insensitive input ? built-in reverse polarity input protection ? improved ctr symmetry ? industry standard dip package ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications ? ideal for ac signal detection and monitoring agency approvals ? ul1577, file no. e52744 system code h or j, double protection ? csa 93751 ? bsi iec 60950; iec 60065 ? din en 60747-5-5 (vde 0884) available with option 1 note for additional information on the availabl e options refer to option information. i179024 1 2 3 6 5 4 b c e nc a/c c/a 1 2 3 4 8 7 6 5 e c c e a a c c single channel dual channel order information part remarks il250 ctr > 50 %, single channel dip-6 il251 ctr > 20 %, single channel dip-6 il252 ctr > 100 %, single channel dip-6 ild250 ctr > 50 %, dual channel dip-8 ild251 ctr > 20 %, dual channel dip-8 ild252 ctr > 100 %, dual channel dip-8 il250-x007 ctr > 50 %, single channel smd-6 (option 7) il250-x009 ctr > 50 %, single channel smd-6 (option 9) il251-x009 ctr > 20 %, single channel smd-6 (option 9) il252-x007 ctr > 100 %, single channel smd-6 (option 7) il252-x009 ctr > 100 %, single channel smd-6 (option 9) ild250-x009 ctr > 50 %, dual channel smd-6 (option 9) ild251-x006 ctr > 20 %, dual channel dip-8 400 mil (option 6) ild251-x007 ctr > 20 %, dual channel smd-6 (option 7) ILD251-X009 ctr > 20 %, dual channel smd-6 (option 9) ild252-x009 ctr > 100 %, dual channel smd-6 (option 9)
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83618 336 rev. 1.5, 10-dec-08 il250, il251, il252, il d250, ild251, ild252 vishay semiconductors optocoupler, phototransistor output, ac input, with base connection note t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can cause permanent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. exposure to absolute ma ximum ratings for extended periods of the time c an adversely affect reliability. note t amb = 25 c, unless otherwise specified minimum and maximum values are testing requi rements. typical values ar e characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. absolute maximum ratings parameter test condition symbol value unit input forward continuous current i f 60 ma power dissipation p diss 100 mw derate linearly from 25 c 1.33 mw/c output collector emitter breakdown voltage bv ceo 30 v emitter base breakdown voltage bv ebo 5v collector base breakdown voltage bv cbo 70 v power dissipation single channel p diss 200 mw power dissipation dual channel p diss 150 mw derate linearly from 25 c single channel 2.6 mw/c derate linearly from 25 c dual channel 2mw/c coupler isolation test voltage between emitter and detector v iso 5300 v rms creepage distance 7mm clearance distance 7mm isolation resistance v io = 500 v, t amb = 25 c r io 10 12 v io = 500 v, t amb = 100 c r io 10 11 total dissipation single channel p tot 250 mw total dissipation dual channel p tot 400 mw derate linearly from 25 c single channel 3.3 mw/c derate linearly from 25 c dual channel 5.3 mw/c storage temperature t stg - 55 to + 150 c operating temperature t amb - 55 to + 100 c lead soldering time at 260 c 10 s electrical characteristics parameter test condition part symbol min. typ. max. unit input forward voltage i f = 10 ma v f 1.2 1.5 v output collector emitter breakdown voltage i c = 1 ma bv ceo 30 50 v emitter base breakdown voltage i e = 100 a bv ebo 710 v collector base breakdown voltage i c = 10 a bv cbo 70 90 v collector emitter leakage current v ce = 10 v i ceo 550na coupler collector emitter saturation voltage i f = 16 ma, i c = 2 ma v cesat 0.4 v
document number: 83618 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.5, 10-dec-08 337 il250, il251, il252, ild250, ild251, ild252 optocoupler, phototransistor output, ac input, with base connection vishay semiconductors typical characteristics t amb = 25 c, unless otherwise specified fig. 1 - led forward current vs.forward voltage fig. 2 - normalized non-saturated and saturated ctr vs. led current fig. 3 - normalized non-saturated and saturated ctr vs. led current fig. 4 - normalized non-saturated and saturated ctr vs. led current current transfer ratio parameter test condition part symbol min. typ. max. unit dc current transfer ratio i f = 10 ma, v ce = 10 v il250/ild250 ctr dc 50 % il251/ild251 ctr dc 20 % il251/ild251 ctr dc 100 % symmetry (ctr at + 10 ma)/ (ctr at -10 ma) 0.50 1 2 iil250_01 - 1.5 - 1.0 - 0.5 0.0 0.5 1.0 1.5 - 60 - 40 - 20 0 20 40 60 25 c - 55 c 8 5 c v f - led for w ard v oltage i f - led for w ard c u rrent (ma) iil250_02 100 10 1 0.1 0.0 0.5 1.0 1.5 n ctr(sat) n ctr i f - led c u rrent (ma) n ctr - n ormalized ctr n ormalized to: v ce = 1 0 v , i f =10ma t a = 25 c ctrce(sat) v ce = 0.4 v iil250_03 100 10 1 0.1 0.0 0.5 1.0 1.5 n ctr(sat) n ctr i f - led c u rrent (ma) n ctr - n ormalized ctr n ormalized to: v ce = 10 v , i f = 10 ma, t a = 25 c t a = 50 c ctrce(sat) v ce = 0.4 v iil250_04 100 10 1 0.1 0.0 0.5 1.0 1.5 i f - led c u rrent (ma) n ctr(sat) n ctr n ormalized to: v ce = 10 v ,i f = 10 ma t a = 25 c ctrce(sat) v ce = 0.4 v t a = 70 c n ctr - n ormalized ctr
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83618 338 rev. 1.5, 10-dec-08 il250, il251, il252, il d250, ild251, ild252 vishay semiconductors optocoupler, phototransistor output, ac input, with base connection fig. 5 - normalized non-saturated and saturated ctr vs. led current fig. 6 - collector emitter curre nt vs. temperature and led current fig. 7 - collector emitter leakage current vs.temperature fig. 8 - normalized ctr cb vs. led current and temperature fig. 9 - collector base photocurrent vs. led current fig. 10 - normalized photocurrent vs. i f and temperature iil250_05 0.1 0 100 1.5 1.0 0.5 0.0 i f - led c u rrent (ma) n ctr - n ormalized ctr n ctr(sat) n ctr n ormalized to: v ce = 10 v ,i f = 10 ma, t a =25 c ctr ce(sat) v ce = 0.4 v t a = 8 5 c 1 1 iil250_06 60 50 30 20 10 0 0 5 10 15 20 25 30 35 50 c 70 c 8 5 c i f - led c u rrent (ma) i ce - collector c u rrent (ma) 25 c 40 iil250_07 100 8 0 60 40 20 0 - 20 t a -am b ient temperat u re (c) i ceo - collector-emitter (na) typical v ce =10 v 10 5 10 4 10 3 10 2 10 1 10 0 10 -1 10 -2 iil250_0 8 0.1 0.0 0.5 1.0 1.5 25 c 50 c 70 c i f - led c u rrent (ma) n ctr c b - n ormalized ctr c b n ormalized to: i = 10 ma f v cb =9.3 v t a = 25 c 1 10 100 iil250_09 100 10 1 0.1 0.01 0.1 1 10 100 1000 i f - led c u rrent (ma) i ce - collector base photoc u rrent ( a) i cb = 1.0357 *i f ^ 1.3631 t a = 25 c iil250_10 0.1 100 10 1 0.1 0.01 i f - led c u rrent (ma) n ormalized photoc u rrent n ormalized to: i f = 10 ma, t = 25 c n ib- t a = - 20 c n i b , t a =25 c n i b , t a =50 c n i b , t a =70 c 1 10
document number: 83618 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.5, 10-dec-08 339 il250, il251, il252, ild250, ild251, ild252 optocoupler, phototransistor output, ac input, with base connection vishay semiconductors fig. 11 - normalized non saturated h fe vs. base current and temperature fig. 12 - normalized saturated h fe vs. base current and temperature fig. 13 - propagation delay vs. collector load resistor fig. 14 - switching timing fig. 15 - switching schematic iil250_11 1000 0.4 0.6 0. 8 1.0 1.2 i b - base c u rrent ( a) n h fe - n ormalized h fe - 20 c 25 c 50 c 70 c n ormalized to: i b = 20 a v ce =10 v t a =25 c 100 1 10 iil250_12 100 1000 0.0 0.5 1.0 1.5 i b -basec u rrent ( a) v ce = 0.4 v n ormalized to: v ce =10 v i b = 20 a t a =25 c 70 c 50 c 25 c - 20 c n h fe(sat) - n ormalized sat u rated h fe 1 10 iil250_13 r l - collector load resistor (k ) 100 10 1 0.1 1 10 100 1000 1. 0 1. 5 2. 0 2. 5 t plh t phl t plh - propagation delay ( s) t a = 25 c, i f =10ma v cc = 5 v , v th=1 .5 v t phl - propagation delay ( s) iil250_14 i f t r v o t d t s t f t ph l t plh v th = 1.5 v iil250_15 v o v cc =5 v r l i f = 10 ma f = 10 khz, df = 50 %
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83618 340 rev. 1.5, 10-dec-08 il250, il251, il252, il d250, ild251, ild252 vishay semiconductors optocoupler, phototransistor output, ac input, with base connection package dimensions in inches (millimeters) i17 8 004 0.010 (0.25) typ. 0.114 (2.90) 0.130 (3.0) 0.130 (3.30) 0.150 (3. 8 1) 0.031 (0. 8 0) min. 0.300 (7.62) typ. 0.031 (0. 8 0) 0.035 (0.90) 0.100 (2.54) typ. 0.039 (1.00) min. 0.01 8 (0.45) 0.022 (0.55) 0.04 8 0.022 (0.55) 0.24 8 (6.30) 0.256 (6.50) 0.335 ( 8 .50) 0.343 ( 8 .70) pin one id 6 5 4 1 2 3 1 8 3 to 9 0.300 to 0.347 (7.62 to 8 . 8 1) 4 typ. iso method a (0.45) i17 8 006 pin one id 0.255 (6.4 8 ) 0.26 8 (6. 8 1) 0.379 (9.63) 0.390 (9.91) 0.030 (0.76) 0.045 (1.14) 4 typ. 0.100 (2.54) typ. 10 3 to 9 0.300 (7.62) typ. 0.01 8 (0.46) 0.022 (0.56) 0.00 8 (0.20) 0.012 (0.30) 0.110 (2.79) 0.130 (3.30) 0.130 (3.30) 0.150 (3. 8 1) 0.020 (0.51) 0.035 (0. 8 9) 0.230 (5. 8 4) 0.250 (6.35) 4 3 2 1 0.031 (0.79) 0.050 (1.27) 5 6 7 8 iso method a min. 0.315 ( 8 .00) 0.020 (0.51 ) 0.040 (1.02 ) 0.300 (7.62) ref. 0.375 (9.53) 0.395 (10.03 ) 0.012 (0.30 ) typ. 0.0040 (0.102) 0.009 8 (0.249) 15 max. option 9 0.014 (0.35) 0.010 (0.25) 0.400 (10.16) 0.430 (10.92) 0.307 (7. 8 ) 0.291 (7.4) 0.407 (10.36) 0.391 (9.96) option 6 0.315 ( 8 .0) min. 0.300 (7.62) typ. 0.1 8 0 (4.6) 0.160 (4.1) 0.331 ( 8 .4) min. 0.406 (10.3) max. 0.02 8 (0.7) option 7 1 8 450
document number: 83618 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.5, 10-dec-08 341 il250, il251, il252, ild250, ild251, ild252 optocoupler, phototransistor output, ac input, with base connection vishay semiconductors ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve t he performance of our products, processes, distribution and o perating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances in to the atmosphere whic h are known as ozone depleting substances (odss). the montreal protocol (1987) a nd its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. vari ous national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of co ntinuous improvements to elim inate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air ac t amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify t hat our semiconductors are not manufactured with ozone dep leting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating para meters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, dam ages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death as sociated with such unint ended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
vishay dip-8 document number 83241 rev. 1.1, 09-dec-03 vishay semiconductors www.vishay.com 1 dip-8 package dimensions in inches (mm) i178006 pin one id .255 (6.48) .268 (6.81) .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .100 (2.54) typ. 10 3C9 .300 (7.62) typ. .018 (.46) .022 (.56) .008 (.20) .012 (.30) .110 (2.79) .130 (3.30) .130 (3.30) .150 (3.81) .020 (.51 ) .035 (.89 ) .230(5.84) .250(6.35) 4 3 2 1 .031 (0.79) .050 (1.27) 5 6 78 iso method a
www.vishay.com 2 document number 83241 rev. 1.1, 09-dec-03 vishay dip-8 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
vishay dip-6a document number 83263 rev. 1.1, 10-dec-03 vishay semiconductors www.vishay.com 1 dip-6a package dimensions in inches (mm) i178004 .010 (.25) typ. .114 (2.90) .130 (3.0) .130 (3.30) .150 (3.81) .031 (0.80) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) min. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one id 6 5 4 1 2 3 18 3C9 .300C.347 (7.62C8.81) 4 typ. iso method a
www.vishay.com 2 document number 83263 rev. 1.1, 10-dec-03 vishay dip-6a vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
document number: 83715 for technical questions, please contact: optocoupl er.answers@vishay.com www.vishay.com rev. 1.4, 11-jan-08 1 footprints footprints vishay semiconductors fig. 1 - so8a and dso8a smd fig. 2 - sop-4, miniflat fig. 3 - sop-6, 5 pin wide body fig. 4 - 8 pin pcmcia 0.236 (5.99) r 0.010 (0.13) 0.050 (1.27) 17977 0.014 (0.36) 0.036 (0.91) 0.045 (1.14) 0.170 (4.32) 0.260 (6.6) 0.195 (5.0) 0.296 (7.6) 0.004 (0.1) 0.006 (0.15) 0.050 (1.27) 0.035 (0.9) possi b le footprint 1 8 403 0.027 (0.7) 0.172 (4.4) 0.273 (7.0) 0.027 (0.7) 0.004 (0.1) 0.00 6(0 .15) 0.050 (1.27) 0.035 (0.9) 0.099 (2.54) 0.325 ( 8 .2) 0.425 (10. 8 ) 0.293 (7.5) 0.39 8 (10.2) possi b le footprint 1 8 406 17972 0.336 ( 8 .53) 0.266 (6.76) 0.356 (9.04) 0.050 (1.27) 0.045 (1.14) r 0.010 (0.25) 0.014 (0.36) 0.036 (0.91)
www.vishay.com for technical questions, pleas e contact: optocoupler.answers@vishay.com document number: 83715 2 rev. 1.4, 11-jan-08 footprints vishay semiconductors footprints fig. 5 - 8 pin pcmcia, heat sink fig. 6 - mini coupler fig. 7 - sop-16 fig. 8 - 4 pin mini-flat fig. 9 - sop-6, 4 pin wide body fig. 10 - 4 pin smd option 7 r 0.010 (0.25) 0.336 ( 8 .53) 0.0 8 6 (2.1 8 ) 0.050 (1.27) 17976 0.266 (6.76) 0.356 (9.04) 0.014 (0.36) 0.036 (0.91) 0.045 (1.14) 1797 8 0.296 (7.52) 0.276 (7.01) 0.010 (0.25) 0.053 (1.35) 0.024 (0.61) 0.026 (0.66) 0.216 (5.49) 0.050 (1.27) 0.040 (1.02) r 0.005 (0.13) 17974 r 0.010 (0.25) 0.270 (6. 8 6) 0.014 (0.36) 0.036 (0.91) 0.045 (1.14) 0.050 (1.27) 0.200 (5.0 8 ) 0.290 (7.37) 0.100 (2.54) 17973 0.270 (6. 8 6) 0.014 (0.36) 0.036 (0.91) 0.045 (1.14) 0.200 (5.0 8 ) 0.290 (7.37) r 0.010 (0.25) 1 8 405 0.027 (0.7) 0.004 (0.1) 0.006 (0.15) 0.035 (0.9) 0.099 (2.54) 0.325 ( 8 .2) 0.425 (10. 8 ) 0.293 (7.5) 0.39 8 (10.2) possi b le footprint 1796 2 r 0.010 (0.25) 0.406 (10.31) 0.100 (2.54) 0.030 (0.76) 0.070 (1.7 8 ) 0.060 (1.52) 0.435 (11.05) 0.315 ( 8 .00) min.
document number: 83715 for technical questions, please contact: optocoupl er.answers@vishay.com www.vishay.com rev. 1.4, 11-jan-08 3 footprints footprints vishay semiconductors fig. 11 - 6 pin smd option 7 fig. 12 - 8 pin smd option 7 fig. 13 - 16 pin smd option 7 fig. 14 - 4 pin smd option 8 17963 r 0.010 (0.25) 0.406 (10.31) 0.100 (2.54) 0.030 (0.76) 0.070 (1.7 8 ) 0.060 (1.52) 0.435 (11.05) 0.315 ( 8 .00) min. 17964 r 0.010 (0.25) 0.406 (10.31) 0.100 (2.54) 0.030 (0.76) 0.070 (1.7 8 ) 0.060 (1.52) 0.435 (11.05) 0.315 ( 8 .00) min. 17965 r 0.010 (0.25) 0.406 (10.31) 0.100 (2.54) 0.030 (0.76) 0.070 (1.7 8 ) 0.060 (1.52) 0.435 (11.05) 0.315 ( 8 .00) min. 17966 r 0.010 (0.25) 0.472 (11.99) 0.100 (2.54) 0.030 (0.76) 0.070 (1.7 8 ) 0.060 (1.52) 0.512 (13.00) 0.392 (9.95) min.
www.vishay.com for technical questions, pleas e contact: optocoupler.answers@vishay.com document number: 83715 4 rev. 1.4, 11-jan-08 footprints vishay semiconductors footprints fig. 15 - 6 pin smd option 8 fig. 16 - 4 pin smd option 9 fig. 17 - 6 pin smd option 9 fig. 18 - 8 pin smd option 9 fig. 19 - 16 pin smd option 9 17967 r 0.010 (0.25) 0.472 (11.99) 0.100 (2.54) 0.030 (0.76) 0.070 (1.7 8 ) 0.060 (1.52) 0.512 (13.00) 0.392 (9.95) min. 1796 8 r 0.010 (0.25) 0.395 (10.03) 0.100 (2.54) 0.030 (0.76) 0.070 (1.7 8 ) 0.060 (1.52) 0.435 (11.05) 0.315 ( 8 .00) min. 17969 r 0.010 (0.25) 0.395 (10.03) 0.100 (2.54) 0.030 (0.76) 0.070 (1.7 8 ) 0.060 (1.52) 0.435 (11.05) 0.315 ( 8 .00) min. 17970 r 0.010 (0.25) 0.395 (10.03) 0.100 (2.54) 0.030 (0.76) 0.070 (1.7 8 ) 0.060 (1.52) 0.435 (11.05) 0.315 ( 8 .00) min. 17971 r 0.010 (0.25) 0.395 (10.03) 0.100 (2.54) 0.030 (0.76) 0.070 (1.7 8 ) 0.060 (1.52) 0.435 (11.05) 0.315 ( 8 .00) min.
document number: 83715 for technical questions, please contact: optocoupl er.answers@vishay.com www.vishay.com rev. 1.4, 11-jan-08 5 footprints footprints vishay semiconductors fig. 20 - 16 pin pcmcia 17975 r 0.010 (0.25) 0.336 ( 8 .53) 0.100 (2.54) 0.050 (1.27) 0.266 (6.76) 0.014 (0.36) 0.045(1.14) 0.356 (9.04) 0.036 (0.91)
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